Static induction transistors

A recessed Schottky gate type static induction transistor comprising:

• a substrate fabricated of a heavily-doped silicon carbide having a selected conductivity type;
• a drift layer fabricated of a lightly-doped silicon carbide having the selected conductivity type provided upon the substrate, the drift layer having a plurality of spaced-apart mesas which extend outwardly from the drift layer and define recesses therebetween;
• a plurality of source regions constructed of heavily doped silicon carbide having the selective conductivity type, each source region being disposed adjacent to a central portion of a top surface of a respective mesa of the drift layer and defining shoulders on either side of said source regions;
• a gate material provided on the drift layer between two adjacent mesas, the gate material further lying adjacent to sidewalls of the mesas forming at least one of the recesses and extending along a portion of said shoulders and being in direct contact with said drift layer at the bottom of said recess, along said sidewalls and along said portion of said shoulders, without the intervention of an oxide layer.