Process for manufacturing semiconductor devices separated by an air-bridge
AssigneeFujitsu Limited
InventorsTakao Miura, Tunenori Yamauchi, Yoshinobu Monma, Hiroshi Goto
Life of this patent
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Abstract
A process for manufacturing a semiconductor device comprising: a substrate having an insulating layer and a semiconductor layer lying on the insulating layer, the semiconductor layer having been divided to form a plurality of isolated semiconductor lands by trenches extending through the semiconductor layer to the insulating layer; integrated circuits formed on the respective lands; and conductors running above and across the trenches to electrically connect the integrated circuits on the isolated semiconductor lands.
Claims19
A process of producing a semiconductor device, said process comprising the steps of:
- preparing a substrate having a first insulating layer and a semiconductor layer lying on the first insulating layer;
- forming a plurality of integrated circuits in the semiconductor layer;
- forming isolating trenches extending through the semiconductor layer to the first insulating layer so that the plurality of integrated circuits are separated and including regions filled with air, to form a plurality of isolated semiconductor lands mechanically connected to each other by the substrate, wherein side walls of said isolating trenches are covered with a diffused layer in the same conductivity type as that of the substrate;
- and
- electrically connecting the plurality of integrated circuits of the isolated semiconductor lands by conductors running above and across the regions of the isolating trenches filled with air after said step of forming isolating trenches.
A process of producing a semiconductor device, said process comprising the steps of:
- preparing a substrate having an insulating layer and a semiconductor layer lying on the insulating layer;
- forming a plurality of integrated circuits in the semiconductor layer;
- forming isolating trenches through the semiconductor layer and down to the insulating layer, to separate the plurality of integrated circuits, the plurality of integrated circuits being mechanically connected to each other by the substrate, wherein side walls of said isolating trenches are covered with a diffused layer in the same conductivity type as that of the substrate;
- electrically connecting the separated plurality of integrated circuits with metal connectors running above and across the isolating trenches after said step of forming isolating trenches, wherein the isolating trenches have respective insulating spaces filled only with air.
Dependencies are inferred from the claim text.