A SOI substrate fabricating method

Abstract

A SOI substrate fabricating method comprises the steps of: making a first etch-stop layer on a silicon substrate; polishing the surface of the first etch-stop layer; making a silicon buffer layer on the polished surface of the first etch-stop layer; making a silicon layer on the silicon buffer layer; making an insulating layer on the silicon layer; bonding one of major surfaces of a support substrate onto the insulating layer; and removing the silicon substrate, the first etch-stop layer and the silicon buffer layer and maintaining the insulating layer and the silicon layer on the one surface of the support substrate. Another SOI substrate fabricating method comprising the steps of: making a first etch-stop layer on a silicon substrate; polishing one surface of the first etch-stop layer; making a silicon buffer layer on the polished surface of the first etch-stop layer; making a compound semiconductor layer comprising silicon and at least one of germanium and carbon on the silicon buffer layer; making an insulating layer on the compound semiconductor layer; bonding one of major surfaces of a support substrate onto the insulating layer; and removing the silicon substrate, the first etch-stop layer and the silicon buffer layer and maintaining the insulating layer and the compound semiconductor layer on the one surface of the support substrate.

Dependencies are inferred from the claim text.