Method for forming self-aligned silicide structure

A method for forming a self-aligned silicide structure, said method comprising:

• forming an oxide layer on a substrate;
• forming a polysilicon layer on the oxide layer;
• patterning the polysilicon layer and the oxide layer using a photoresist mask, wherein a gate region with a gate and gate oxide is formed;
• doping the substrate to form lightly-doped source and drain regions using the gate as a doping mask;
• forming a dielectric spacer on a sidewall of the gate;
• removing a portion of the gate and removing portions of the substrate not covered by the dielectric spacer;
• forming a conductive layer on the gate and the substrate;
• reacting the conductive layer with portions of the gate and substrate to form a silicide;
• removing portions of the conductive layer remaining after reacting the conductive layer with portions of the gate and substrate;
• and
• forming heavily-doped source and drain regions by ion implantation using the dielectric spacer as an implant mask.