Reactive ion etching to physically etch thin film semiconductor
AssigneeCanon Kabushiki Kaisha
InventorsMasato Yamanobe, Takayuki Ishii
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Abstract
A thin film semiconductor device includes a gate electrode, a gate insulating electrode, a thin film semiconductor layer, an ohmic layer, source and drain electrodes, and a protective layer. The protective layer contains an impurity for controlling conductivity.
Claims7
A method for producing a thin film semiconductor device which comprises a transistor having a thin film semiconductor layer, a gate electrode provided under said thin film semiconductor layer through an insulating layer, and source and drain electrodes electrically connected to said thin film semiconductor layer comprising:
- after forming said thin film semiconductor layer, subjecting to reactive ion etching a surface of said thin film semiconductor layer between said source and drain electrodes employing high frequency power of at least 250 W and a pressure not greater than 10 Pa to conduct physical etching and thereby electronically depleting a surface section of a channel area between said source and drain electrodes.
A method for producing a thin film semiconductor device comprising the steps of:
- providing a gate electrode on a substrate;
- providing an insulating layer covering said gate electrode on said substrate;
- providing a thin film semiconductor layer on said insulating layer;
- providing an n-layer on said thin film semiconductor layer;
- providing a conductive layer operating as a source or drain electrode on said n-layer;
- and
- removing said n-layer formed between said source or drain electrode;
- wherein said step of removing said n-layer includes a reactive ion etching step conducted under conditions to perform mainly a physical etching to deplete a surface side of said thin film semiconductor layer from which said n-layer is removed.
Dependencies are inferred from the claim text.