Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors

A method of producing a transistor in a semiconductor substrate comprising first, second and third juxtaposed doped zones, including respectively the channel, the source and the drain of the transistor, the first zone being situated between the second and the third zones and having a mean doping concentration greater than that of the second and third zones, characterised in that the method comprises the following steps:

• a first oblique implant of ions into the first and the second zones with a first implant angle, a first implant dose and a first implant energy, a mask being formed at the periphery of the third zone outside the first, second and third zones, this mask having sufficient thickness, chosen as a function of the first implant angle, the first dose and the first implant energy to protect the third zone from the ions of the first implant,
• a second oblique implant of ions into the first and third zones with a second implant angle, a second implant dose and a second implant energy, a mask being formed at the periphery of the second zone, outside the first, second and third zones, the mask having sufficient thickness, chosen as a function of the second implant angle, the second dose and the second implant energy to protect the second zone from the ions of the second implant,
• formation after the first and second implants of a gate oxide layer and a gate above the first zone and formation of a drain and of a source in the second and third zones,
• the masks at the periphery of the second and third zones being formed before the first and second implants and wherein the first and second implants are of the same conductivity type.