US 5,705,403 A · Method of measuring doping characteristic of compound semiconductor in real time

Abstract

A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.

Claims5

Dependent claims

A method of sending the doping characteristic of a compound semiconductor in real time, said method comprising the steps of:

epitaxially growing a compound semiconductor in a growth chamber of an epitaxy apparatus;
injecting a reactive gas in said growth chamber;
growing a heterostructure compound semiconductor layer;
simultaneously scanning a He--Ne laser beam and a diode laser beam from a laser apparatus onto the surface of a compound semiconductor in said growth chamber;
analyzing a laser beam reflected and a refraction ratio of an epitaxial layer;
and
analyzing the doping concentration and growth rate of a compound semiconductor grown in real time.

4 more elements

Dependencies are inferred from the claim text.

Method of measuring doping characteristic of compound semiconductor in real time

Life of this patent

Method of measuring doping characteristic of compound semiconductor in real time

Life of this patent

Abstract

Claims5