Process for forming fine patterns for a semiconductor device utilizing three photosensitive layers

A process for forming fine patterns for a semiconductor device, comprising the steps of:

• forming on a semiconductor substrate a lower layer with a first photosensitive film
• forming an intermediate layer over the first photosensitive film;
• forming on the intermediate layer an upper layer with an organic material layer and a second photosensitive film
• selectively exposing the upper layer to a light by use of a first exposure mask having predetermined photointerceptive film patterns therein, and developing to form upper layer patterns which expose the intermediate layer selectively therethrough;
• coating a third photosensitive film on the upper layer patterns and the intermediate layer;
• selectively exposing the third photosensitive film by use of a second light-exposure mark, to form photosensitive film patterns, the second light-exposure mask having photointerceptive patterns each of which is alternated with each of the photointerceptive patterns of the first light-exposure mask so as not to overlap them with each other;
• taking off the exposed areas of the intermediate layer through the photosensitive film patterns until the lower layer is exposed thereby forming intermediate patterns and then removing the upper layer patterns and the photosensitive film patterns;
• taking off the exposed areas of the lower layer through the intermediate patterns, to form lower layer patterns;
• and
• taking off the intermediate patterns.