Method of filling pores in anodized aluminum parts

Abstract

Anodized aluminum coatings employed in semiconductor processing equipment are treated to reduce their sensitivity to halogenated species. The pores of the aluminum oxide surface can be filled either by a metal, such as magnesium or aluminum, forming the corresponding metal oxide that is resistant to reaction with halogens, or by filling the pores with a getter for halogens, such as hydrogen ions. The hydrogen ions adsorbed on the surface of the aluminum oxide react with halogens to form volatile hydrogen halides that can be pumped away in the exhaust system of the semiconductor processing chambers, thereby preventing or reducing reaction of the underlying aluminum oxide with the halogens.

Dependencies are inferred from the claim text.