Opto-electronic semiconductor device including an integrated mode transformer

A device according to claim 5, wherein the height (H) of the etched step (52) is equal to the sum of the thicknesses of the layers (60) deposited epitaxially less the thickness of the layers (62) constituting the electronic function device.

A method of fabricating an opto-electronic device, wherein said method includes the step of forming a coupling guide forming an hourglass-shape mode transformer above said coupling guide and forming a circuitry waveguide above the mode transformer, said mode transformer having a wide mode entry part, a zone of decreasing width to push down the mode toward the coupling guide and a zone of increasing width to transfer the wide mode to said circuitry waveguide, wherein a surface layer of the mode transformer is etched in its thickness in said zone of decreasing width.

A semiconductor opto-electronic device including at least one electronic function component, at least one optical function component and a mode transformer associated with the optical function component, wherein at least some layers of the semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength, and wherein said semiconductor material layers simultaneously forming the electronic function component and layers in the mode transformer zone are made from a material that is initially homogeneous and is rendered locally non-absorbent at the operating wavelength in the optical part.

A semiconductor opto-electronic device including at least one electronic function component, at least one optical function component and a mode transformer associated with the optical function component, wherein at least some layers of the semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength, wherein the various layers of semiconductor material constituting the device are deposited epitaxially on a substrate including and etched step and wherein the semiconductor material layers in the mode transformer zone are etched in the shape of an hourglass comprising a wide mode entry part, a zone of decreasing width to push down the mode and a zone of increasing width to transfer the wide mode to a wavelength.

A semiconductor opto-electronic device including at least one electronic function component, at least one optical function component and a mode transformer associated with the optical function component, wherein at least some layers of the semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength, wherein the mode transformer is formed by total etching of a stripe of the guide layer in zones of varying pitch.

A semiconductor opto-electronic device constituting a waveguide-PIN-HFET, including at least one electronic function component, at least one optical function component and a mode transformer associated with the optical function component, wherein at least some layers of the semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength.

A semiconductor opto-electronic device including at least one electronic function component, at least one optical function component and a mode transformer associated with the optical function component, wherein at least some layers of the semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength, wherein the mode transformer is etched in the shape of an hourglass, which has a wide mode entry part, a zone of decreasing width to push down the mode and a zone of increasing width to transfer the wide mode to a waveguide, and the hourglass-shape mode transformer has a neck of non-null width, and wherein the device further comprises a coupling guide below the mode transformer and a circuitry waveguide above the mode transformer.

A method of fabricating an opto-electronic device, wherein said method includes the step of forming an hourglass-shape mode transformer having a wide mode entry part, a zone of decreasing width to push down the mode and a zone of increasing width to transfer the wide mode to a waveguide, and wherein the surface layer of the mode transformer is etched in its thickness substantially entirely over its zone of decreasing width.