Magnetic head magneto-resistive element with c-shaped multi-layered structure
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsIn-eung Kim, Alexandre M. Choukh
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AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsIn-eung Kim, Alexandre M. Choukh
Estimating the term…
A magneto-resistive (MR) element of a thin-film magnetic head comprises a three-layer structure. The three-layer structure comprises a layer of soft magnetic material, a thin non-magnetic decoupling layer and an MR layer, and has an ellipse-like C-shape with a gap in its back passive region. The axis of easy magnetization of the MR layer is parallel to the main axis of the ellipse-like C-shape three-layered structure. The MR layer is longitudinally biased by an exchange bias field developed by exchange coupling between the antiferromagnetic layer and the MR layer. The antiferromagnetic layer is deposited in direct contact only in the back passive region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductor leads are connected directly to the MR layer within the front active region to define a detection region, and through the antiferromagnetic layer in the back passive region.
A magneto-resistive element for a thin-film magnetic head comprising:
A magneto-resistive element for a thin-film magnetic head, said magneto-resistive element comprising:
Dependencies are inferred from the claim text.