Full depletion mode clocking of solid-state image sensors for improved MTF performance
AssigneeEastman Kodak Company
InventorEric Gordon Stevens
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AssigneeEastman Kodak Company
InventorEric Gordon Stevens
Estimating the term…
The present invention teaches how to maintain temporally the increased collection region (depletion depth) of detectors within a solid-state image sensor. A novel clocking method is used to control charge transfer within charge coupled devices to reduce cross talk with a resulting improvement in the MTF and quantum efficiency. Specifically, the present invention employs a pulsing type of clocking technique wherein the duty cycle is adjusted to maximize the depletion region. These pulses are spaced equally from phase to phase within the multiphase clocking scheme. The present invention is specifically designed for high speed CCD devices in which improvements in the MTF and QE are desired. Time Delay Integration (TDI) image sensors are such devices that have high speed characteristics as a common requirement and the application of the present invention to these devices is discussed. Additionally, the application of the present invention to certain full frame and frame transfer devices having requirements for high speed characteristics will benefit from the teachings of the present invention.
A method of imaging with charge coupled devices (CCD) to reduce lateral diffusion of charge carriers within the CCD by increasing depletion depth comprising the steps of:
An image sensing system comprising:
A method of reducing lateral diffusion within an image sensor comprising the steps of:
A method of reducing lateral diffusion within an image sensor comprising the steps of:
Dependencies are inferred from the claim text.