Back to results
US 5,703,404 AGranted
Semiconductor device comprising an SiOF insulative film
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasazumi Matsuura
Life of this patent
Estimating the term…
Abstract
A semiconductor device having an interlayer insulating film improved to decrease film shrinkage and film stress is provided. Metal interconnections are formed on a substrate. A silicon oxide film is provided on the substrate to cover the metal interconnections and to fill a space between the metal interconnections. The chemical formula of the silicon oxide film contains Si-F bond.
Claims8
A semiconductor device, comprising:
- a substrate;
- first and second metal interconnections formed on said substrate;
- and
- a silicon oxide film formed on said substrate, and covering said first and second metal interconnections and filling a space between said first metal interconnection and said second metal interconnection,
- wherein the chemical formula of said silicon oxide film contains the following chemical structure unit. ##STR4##
2 more elements
Dependencies are inferred from the claim text.