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OwnerMitsuyoshi Endo, Hironori Asai +2inventors
InventorsMitsuyoshi Endo, Hironori Asai, Keiichi Yano, Yoshitoshi Sato
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A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to said one surface of said aluminum nitride substrate at an area other than a region forming said wiring pattern, through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer solely consisting of metal and having no insulating film.
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to sail semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, a distance from an external edge of said aluminum nitride substrate to said connecting terminals being larger than an intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on said one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer.
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the one surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer.
Dependencies are inferred from the claim text.