Power integrated circuit ("PIC") structure with a vertical IGBT

A PIC structure comprising a lightly doped semiconductor layer of the first conductivity type superimposed over a heavily doped semiconductor substrate of a second conductivity type, wherein a Vertical IGBT and a driving and control circuit are integrated, the Vertical IGBT comprising a plurality of elementary cells, each elementary cell comprising at least heavily doped deep body regions of the second conductivity type and body regions of the second conductivity type extending from a top surface of the lightly doped layer thereinto, and the driving and control circuit comprising at least first conductivity type-channel MOSFETs formed inside well regions of the second conductivity type which are included in at lease one isolated lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer of the first conductivity type by means of a respective isolation region of a second conductivity type comprising a first, buried region of the second conductivity type, and a second, heavily doped annular region of the second conductivity type extending from a top surface of the lightly doped layer to said buried region, laterally delimiting said isolated lightly doped region of the first conductivity type, wherein said annular region and said deep body regions have substantially a same depth with respect to the top surface of the lightly doped semiconductor layer.