Method and apparatus for ion beam neutralization
AssigneeEaton Corporation
InventorsJiong Chen, Victor M. Benveniste
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AssigneeEaton Corporation
InventorsJiong Chen, Victor M. Benveniste
Estimating the term…
Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.
An ion implanter for treating one or more workpieces with positively charged ions comprising:
In an ion implanter having an ion source for emitting positively charged ions from a source location, structure for forming an ion beam from the positively charged ions exiting the source, and an ion treatment station for positioning one or more workpieces to intercept the ions in the ion beam as they enter the ion treatment station, a method for injecting neutralizing electrons into the ion beam at a location upstream along the ion beam path from a beam treatment position of the one or more workpieces comprising the steps of bounding the ion beam path with confining structure that includes an entrance and an exit to allow the ion beam to pass through a neutralization region before striking the one or more workpieces at the treatment station;
An ion beam neutralizer for use with an ion implanter comprising:
Dependencies are inferred from the claim text.