Infrared spectroscopic analysis method for gases and device employing the method therein
AssigneeNippon Sanso Corporation
InventorsYoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto
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AssigneeNippon Sanso Corporation
InventorsYoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto
Estimating the term…
The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The present invention is particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.
An infrared spectroscopic analysis device comprising:
An infrared spectroscopic analysis method for gases, for analyzing an impurity in a gas to be measured, comprising the steps of:
An infrared spectroscopic analysis device, comprising:
Dependencies are inferred from the claim text.