Method for forming intermetal dielectric with SOG etchback and CMP
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Douglas Yu, Sylin-Ming Jang
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Abstract
A defect free intermetal dielectric, IMD, and method of forming the defect free IMD are described. The IMD uses spacers formed by means of etchback of a layer of spin-on-glass, SOG. In order to use an oxide layer formed by means of plasma enhanced tetra-ethyl-ortho-silicate, PE-TEOS, as part of the IMD an oxide cap layer formed using plasma enhanced chemical vapor deposition, PE-CVD, is used to isolate the SOG spacers from the PE-TEOS formed oxide layer. By isolating the PE-TEOS formed oxide layer from the SOG spacers a reliable and defect free IMD is achieved.
Claims10
A method of forming intermetal dielectric, comprising the steps of:
- providing a semiconductor substrate having devices formed therein;
- providing a layer of base dielectric formed on said semiconductor substrate;
- providing an electrode pattern formed on said layer of base dielectric;
- forming an oxide underlayer over said layer of base dielectric and said electrode pattern;
- forming a layer of spin-on-glass on said oxide underlayer;
- etching back said layer of spin-on-glass wherein said spin-on-glass is removed from that part of said oxide underlayer directly over said electrode pattern;
- forming an oxide cap layer over said oxide underlayer and that part of said layer of spin-on-glass remaining after etching back said layer of spin-on-glass, wherein said oxide cap layer is formed using plasma enhanced chemical vapor deposition with silane and oxygen;
- forming an intermetal oxide layer over said oxide cap layer, wherein said intermetal oxide layer is formed using plasma enhanced deposition of tetra-ethyl-ortho-silicate;
- and
- planarizing said intermetal oxide layer.
Dependencies are inferred from the claim text.