Method for isolating semiconductor device
AssigneeElectronics and Telecommunications Research Institute
InventorsHyung-Sup Yoon, Jin-Hee Lee, Chul-Sun Park, Kwang-Eui Pyun
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Abstract
A method for isolating a semiconductor device is disclosed including the steps of sequentially growing a plurality of material layers on a semiconductor substrate, etching the material layers down to a predetermined depth of the substrate to thereby define an active region, forming a semi-insulating film on the exposed semiconductor substrate in order to planarize the step-difference of the active region and the isolation region, and then, forming an ohmic metal layer on a space where the semi-insulating film is regrown.
Claims5
A method for isolating a semiconductor device, comprising the steps of:
- (a) sequentially growing a plurality of material layers on a semiconductor substrate;
- (b) etching said material layers down to a predetermined depth of said substrate, to thereby define an active region using double insulating film mask comprised of a oxide and a nitride film;
- (c) forming a semi-insulating film on said exposed semiconductor substrate in order to planarize the step-difference of said active region and an isolation region;
- and
- (d) forming an ohmic metal layer on a space where said semi-insulating film is regrown.
Dependencies are inferred from the claim text.