Method of making buried metallization structure

A process of forming a buried interconnect providing a conductive pathway between multiple active devices provided in an active layer of a semiconductor substrate having a surface, the buried interconnect being located beneath the surface of said semiconductor substrate, the process comprising the following steps:

• masking regions of said semiconductor substrate overlying regions outside of the location of said buried interconnect;
• implanting a conductive dopant including aluminum in said semiconductor substrate to provide said buried interconnect at a defined distance below the surface of said semiconductor substrate;
• forming said multiple active devices in said active layer of the semiconductor such that the buried interconnect electrically connects the multiple active devices;
• and
• forming an insulating layer at about said defined distance below the surface of said semiconductor substrate wherein said insulating layer bounds said buried interconnect thereby confining current between said multiple active devices to the buried interconnect.