Magneto-resistance effect element
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroshi Sakakima, Mitsuo Satomi, Hiroshi Takeuchi
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Abstract
Disclosed is a magneto-resistance effect element indicating a larger magneto-resistance effect at room temperature under impression of low magnetic field is obtained with the construction wherein the characteristics of artificial metallic lattice membrane are exploited.
Claims2
A magneto-resistance effect element wherein electric current passes through a magneto-resistance effect material configured in a substantially serpentine manner, wherein a demagnetization field coefficient in the direction of the current is smaller than demagnetization field coefficients in directions other than the direction of current flow and an external magnetic field strength is measured by the change of resistance of said magneto-resistance effect material caused by the external magnetic field, wherein the major amount of the electric current passing through the magneto-resistance effect material configured as aforesaid is in parallel to the direction of said external magnetic field, and said magneto-resistance effect material is composed of an artificial metallic lattice membrane which has a structure such that a magnetic thin film layer with thickness of 5-50 .ANG. and non-magnetic metallic thin film layer with thickness of 5-50 .ANG. are interchangeably laminated, and wherein the non-magnetic metallic thin film layer is formed from a member selected from the group consisting of Cu, Ag, Au, Pt and Ru.
Dependencies are inferred from the claim text.