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US 5,702,532 AGranted
MOCVD reactor system for indium antimonide epitaxial material
AssigneeHughes Aircraft Company
InventorsCheng P. Wen, Randy K. Rolph, Timothy T. Zielinski
Life of this patent
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Abstract
Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.
Claims6
A metal organic chemical vapor deposition reactor system for depositing epitaxial material layers on a plurality of wafers, said system consisting of:
- (a) a carrying gas source for providing carrying gas;
- (b) a plurality of mass flow controllers coupled to the carrying gas source;
- (c) a first bubbler for a first solid precursor, coupled to a first of the plurality of mass flow controllers wherein the first solid precursor provides a first reactant;
- (d) a second bubbler for a second solid precursor, coupled to a second of the plurality of mass flow controllers wherein the second solid precursor provides a second reactant;
- (e) a third bubbler for a third solid precursor, coupled to a third of the plurality of mass flow controllers wherein the third solid precursor provides a third reactant;
- (f) a first manifold having a first input coupled to the carrying gas source and second and third inputs coupled to outputs of the first and second bubblers respectively;
- (g) a second manifold having a first input coupled to the carrying gas source and a second input coupled to an output of the third bubbler;
- (h) a reactor chamber having a first input coupled to an output of the first manifold and a second input coupled to an output of the second manifold wherein a mixture of the first and second reactants enters the reactor chamber through the first input thereof and the third reactant enters the reactor chamber through the second input thereof;
- (i) a rotatable susceptor disposed within the reactor chamber for supporting said wafers and rotating said wafers about the axis of said susceptor;
- and
- (j) means for rotating each wafer of said plurality of wafers about the center of each said wafer.
8 more elements
A metal organic chemical vapor deposition reactor system for depositing epitaxial material layers on a plurality of wafers, said system consisting of:
- (a) a carrying gas source for providing carrying gas;
- (b) a plurality of mass flow controllers coupled to the carrying gas source;
- (c) a first bubbler for a first solid precursor, coupled to a first of the plurality of mass flow controllers wherein the first solid precursor provides a first reactant;
- (d) a second bubbler for a second solid precursor, coupled to a second of the plurality of mass flow controllers wherein the second solid precursor provides a second reactant;
- (e) a third bubbler for a third solid precursor, coupled to a third of the plurality of mass flow controllers wherein the third solid precursor provides a third reactant;
- (f) a first manifold having a first input coupled to the carrying gas source and second and third inputs coupled to outputs of the first and second bubblers respectively;
- (g) a second manifold having a first input coupled to the carrying gas source and a second input coupled to an output of the third bubbler;
- (h) a reactor chamber having a first input coupled to an output of the first manifold and a second input coupled to an output of the second manifold wherein a mixture of the first and second reactants enters the reactor chamber through the first input thereof and the third reactant enters the reactor chamber through the second input thereof;
- (i) a rotatable susceptor disposed within the reactor chamber for supporting said wafers and rotating said wafers about the axis of said susceptor;
- (j) means for rotating each wafer of said plurality of wafers about the center of each said wafer;
- and
- (k) a heat source coupled to the rotatable susceptor for creating a precracking zone on the susceptor to precrack one or more of the precursors which have entered the reactor chamber.
9 more elements
A metal organic chemical vapor deposition reactor system for depositing epitaxial material layers on a plurality of wafers, said system consisting of:
- (a) a carrying gas source for providing carrying gas;
- (b) a plurality of mass flow controllers coupled to the carrying gas source;
- (c) a first bubbler for a first solid precursor, coupled to a first of the plurality of mass flow controllers wherein the first solid precursor provides a first reactant;
- (d) a second bubbler for a second solid precursor, coupled to a second of the plurality of mass flow controllers wherein the second solid precursor provides a second reactant;
- (e) a third bubbler for a third solid precursor, coupled to the second bubbler wherein the third solid precursor provides a third reactant;
- (f) a manifold having a first input coupled to the carrying gas source and second and third inputs coupled to outputs of the first and third bubblers respectively;
- (g) a reactor chamber having an input coupled to an output of the manifold wherein a mixture of the first, second, and third reactants enters the reactor chamber through the input of the reactor chamber;
- (h) a rotatable susceptor disposed within the reactor chamber for supporting said plurality of wafers and rotating said wafers about the axis of said susceptor;
- and
- (j) means for rotating each wafer of said plurality of wafers about the center of each said wafer.
7 more elements
Dependencies are inferred from the claim text.