Fabrication of two-part emitter for gated field emission device
AssigneeIndustrial Technology Research Institute
InventorsJammy Chin-Ming Huang, David Nan-Chou Liu
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AssigneeIndustrial Technology Research Institute
InventorsJammy Chin-Ming Huang, David Nan-Chou Liu
Estimating the term…
A two-part field emission structure, and a method for making such a structure, is described. A substrate is provided having a first conductive layer thereon, a first insulating layer over the first conductive layer, a second conductive layer over the first insulating layer, and an opening formed in the first insulating and second conductive layers. A sacrificial layer is formed over the second conductive layer. A bottom portion of the field emitter structure is formed in the opening, by vertical deposition of a conductive material, whereby a third conductive layer, having a collimated channel over the bottom portion, is formed over the sacrificial layer. The formation of the field emitter structure is completed by vertical deposition of a tip material on to the top of the bottom portion of the field emitter structure, whereby a top conductive layer is formed over the third conductive layer. Lastly, the sacrificial layer, the third conductive layer, and the top conductive layer are removed. An optional interface adhesion layer is formed between the bottom portion of the field emitter structure and the tip.
A method of fabricating a field emitter structure, comprising the steps of:
A method of fabricating a field emission display, comprising the steps of:
The method of claim 12 wherein said tip material has a work function of between about -0.4 and 5 eV, and is selected from the group consisting of crystalline diamond, silicon, tungsten, copper, niobium, molybdenum, hafnium, silicon carbide, titanium carbide, barium, tantalum nitride, cesium and cermet.
Dependencies are inferred from the claim text.