Charged particle beam exposure method and mask employed therefor

A mask which is capable of forming a charged particle beam irradiated thereto into a shape corresponding to an exposed pattern element to be formed on a radiation-sensitive substrate, said mask comprising:

• a peripheral pattern for exposing a marginal portion of one exposed pattern element to be formed on said radiation-sensitive substrate;
• and
• at least one inner pattern for exposing a region inside said marginal portion of said one exposed pattern element.

A charged particle beam exposure method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate including:

• a first step of irradiating the charged particle beam to a first mask having a first mask pattern formed thereon, said first mask pattern corresponding to a peripheral portion of a predetermined region to be exposed on said radiation-sensitive substrate;
• and
• a second step of irradiating a charged particle beam having an energy greater than that of the charged particle beam irradiated in said first step to a second mask having a second mask pattern formed thereon, said second mask pattern corresponding to an inner portion lying inside said peripheral portion of said predetermined region, whereby, said predetermined region on said radiation-sensitive substrate is exposed through said first and second steps.

A charged particle beam exposure method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate including:

• a first step of irradiating the charged particle beam to a first mask pattern formed on said mask and corresponding to a peripheral portion of a predetermined region to be exposed on said radiation-sensitive substrate;
• and
• a second step of irradiating a charged particle beam having an energy greater than that of the charged particle beam irradiated in said first step to a second mask pattern formed on said mask at a position which is different from the position at which said first mask pattern is formed and corresponding to an inner portion lying inside said peripheral portion of said predetermined region, whereby, said predetermined region on said radiation-sensitive substrate is exposed through said first and second steps.