Magnetoresistance effect element
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Saito, Shiho Okuno, Koichiro Inomata
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Abstract
A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
Claims1
A magnetoresistance effect element comprising a multilayer formed by alternatively stacking at least two magnetic layers and at least one non-magnetic layer in a manner to produce a magnetoresistance effect, said magnetic layers consisting essentially of an alloy of the formula:
- (Fe.sub.1-x Co.sub.x).sub.y Ni.sub.1-y
- wherein 0<x<1 and 0<Y<1 and having a thickness of from 2 to 50 .ANG., said non-magnetic layer consisting essentially of Cu and alloys of Cu, said non-magnetic layer having a thickness of from 2 to 100 .ANG..
Dependencies are inferred from the claim text.