Insulator deposition using focused ion beam

A method of depositing material on an integrated circuit, comprising:

• a. placing an integrated circuit in a vacuum chamber,
• b. applying to a localized surface region of the integrated circuit at which insulator material is to be deposited, a first gas containing molecules of di-t-butoxydiacetoxy-silane (DBTS) and a second gas containing molecules of a compound which reacts with metal ions;
• c. generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas;
• and
• d. directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen.

A method of depositing material on an integrated circuit, comprising:

• a. placing an integrated circuit in a vacuum chamber,
• b. applying to a localized surface region of the integrated circuit at which insulator material is to be deposited, a first gas containing molecules of di-t-butoxydiacetoxy-silane (DBTS) and a second gas containing molecules of carbon tetrabromide (CBr.sub.4), wherein the gas partial-pressure ratio of carbon tetrabromide to di-t-butoxydiacetoxy-silane is between about 1:1 and about 1:2;
• c. generating a focused ion beam having metal ions of energy between about 5 kev and about 40 kev;
• and
• d. directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen.