Method for producing ultra high purity titanium films

A method of making ultra high purity titanium metal, comprising the steps of:

• generating gaseous TiI.sub.4 in situ by reacting titanium metal starting material with gaseous iodine in a reaction chamber under vacuum conditions, said reaction occurring at a steady state temperature in the range of about 500.degree.-750.degree. C.;
• transferring the gaseous reaction product TiI.sub.4 to a first distillation column;
• distilling said TiI.sub.4 in said first distillation column to remove lower volatility impurities, said first distillation column operated at a temperature in the range of about 150.degree.-370.degree. C. and at a pressure in the range of about 0.05-670 torr to produce partially pure TiI.sub.4 ;
• transferring the partially pure TiI.sub.4 to a second distillation column;
• distilling said partially pure TiI.sub.4 in said second distillation column to remove higher volatility impurities, said second distillation column operated at a temperature in the range of about 150.degree.-370.degree. C. and at a pressure in the range of about 0.05-670 torr to produce ultra high purity of greater than 99.998% TiI.sub.4 ;
• transferring the ultra high purity TiI.sub.4 in liquid form to a deposition chamber heated to a temperature of about 200.degree. C. to vaporize the liquid TiI.sub.4 ;
• and
• contacting a titanium deposition substrate located within the deposition chamber and heated to a temperature in the range of about 1100.degree.-1400.degree. C. with the ultra high purity TiI.sub.4 vapor, whereby said TiI.sub.4 decomposes and ultra high purity of greater than 99.998% titanium metal is deposited on said substrate.