Amorphous silicon carbide film and photovoltaic device using the same
AssigneeSanyo Electric Co., Ltd.
InventorsMasaki Shima, Norihiro Terada
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Abstract
In the present invention, the optical band gap Eg (eV) of an amorphous silicon carbide film has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film: Eg=a+bC.sub.H /100+cC.sub.C /100, where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55, whereby the defect density in the amorphous silicon carbide film can be significantly reduced.
Claims9
An amorphous silicon carbide semiconductor, wherein
- the optical band gap Eg (eV) of the semiconductor has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the semiconductor:
- Eg=a+bC.sub.H /100+cC.sub.C /100,
- where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55.
A photovoltaic device comprising a power generating portion comprising a p-type amorphous semiconductor layer, an i-type amorphous semiconductor layer, and an n-type amorphous semiconductor layer, wherein
- said i-type amorphous semiconductor layer comprises an amorphous silicon carbide film whose optical band gap Eg (eV) has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film:
- Eg=a+bC.sub.H /100+cC.sub.C /100,
- where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55.
A photovoltaic device comprising a power generating portion comprising a p-type amorphous semiconductor layer, an i-type amorphous semiconductor layer, and an n-type amorphous semiconductor layer, wherein
- a buffer layer comprising an intrinsic amorphous semiconductor material is provided between said p-type amorphous semiconductor layer and the i-type layer, and
- said buffer layer comprises an amorphous silicon carbide film whose optical band gap Eg (eV) has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film:
- Eg=a+bC.sub.H /100+cC.sub.C /100,
- where a, b, and c are respectively in the ranges of 1,54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55.
A photovoltaic device comprising a plurality of power generating portions laminated together, each portion comprising a p-type amorphous semiconductor layer, an i-type amorphous semiconductor layer, and an n-type amorphous semiconductor layer, wherein
- said i-type amorphous semiconductor layer of said power generating portion positioned on the side of light incidence comprises an amorphous silicon carbide film whose optical band gap Eg (eV) has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film:
- Eg=a+bC.sub.H /100+cC.sub.C /100,
- wherein a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55.
Dependencies are inferred from the claim text.