Susceptor for a device for epitaxially growing objects and such a device

A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, said susceptor including:

• 1) plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls, said wall pieces being made of a material which may be heated by induction created by heating means;
• 2) means for securing said wall pieces to each other to form said susceptor;
• 3) a channel defined by susceptor walls and adapted to receive said substrate and through which a source material for the growth is to be fed;
• and
• 4) at least one SiC plate inserted to cover at least one of said top and bottom walls and to extend between and separate said lateral walls and said at least one of said top and bottom walls.