Method of making low profile shallow trench double polysilicon capacitor
AssigneeChartered Semiconductor Manufacturing Pte Ltd.
InventorYang Pan
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Abstract
A method for forming a double layer planar polysilicon capacitor for use within integrated circuits is presented. Formed within a semiconductor substrate is a deep trench which is filled with a dielectric material. Formed within the dielectric material within the deep trench is a shallow trench which has a first polysilicon capacitor plate formed therein. The upper surface of the first polysilicon capacitor plate is substantially planar with the semiconductor substrate. Formed upon the first polysilicon capacitor plate is a polysilicon capacitor dielectric layer. Formed upon the polysilicon capacitor dielectric layer is a second polysilicon capacitor plate.
Claims14
A method for forming a planar polysilicon capacitor for use within an integrated circuit comprising:
- providing a semiconductor substrate having a planar surface;
- forming within the planar surface of the semiconductor substrate a deep trench;
- forming within the deep trench a dielectric material;
- forming within the dielectric material within the deep trench a shallow trench;
- forming within the shallow trench a first polysilicon capacitor plate, the first polysilicon capacitor plate having an upper surface opposite the shallow trench;
- forming upon the first polysilicon capacitor plate a polysilicon capacitor dielectric layer;
- and
- forming upon the polysilicon capacitor dielectric layer a second polysilicon capacitor plate, the second polysilicon capacitor plate having an upper surface opposite the polysilicon capacitor dielectric layer where the upper surface of the first polysilicon capacitor plate is substantially planar with the planar surface of the semiconductor substrate and where the upper surface of the second polysilicon capacitor plate is above the planar surface of the semiconductor substrate.
A method for forming a planar polysilicon capacitor within an integrated circuit comprising:
- providing a semiconductor substrate having a planar surface;
- forming upon the planar surface of the semiconductor substrate an integrated circuit structure comprising at least one field effect transistor;
- forming within the planar surface of the semiconductor substrate a deep trench;
- forming within the deep trench a dielectric material;
- forming within the dielectric material within the deep trench a shallow trench;
- forming within the shallow trench a first polysilicon capacitor plate, the first polysilicon capacitor plate having an upper surface opposite the shallow trench;
- forming upon the first polysilicon capacitor plate a polysilicon capacitor dielectric layer;
- and
- forming upon the polysilicon capacitor dielectric layer a second polysilicon capacitor plate, the second polysilicon capacitor plate having an upper surface opposite the polysilicon capacitor dielectric layer where the upper surface of the first polysilicon capacitor plate is substantially planar with the planar surface of the semiconductor substrate and where the upper surface of the second polysilicon capacitor plate is above the planar surface of the semiconductor substrate.
Dependencies are inferred from the claim text.