Method and apparatus for performing chemical vapor deposition
AssigneeUnited Microelectronics Corp.
InventorHsin-Kun Chu
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AssigneeUnited Microelectronics Corp.
InventorHsin-Kun Chu
Estimating the term…
An apparatus and method for performing a chemical vapor deposition (CVD) procedure to deposit an insulating layer when fabricating semiconductor integrated circuit devices over a silicon wafer. The CVD apparatus includes a buffer chamber for temporarily holding the wafer, and a chemical vapor deposition reaction chamber arranged at the periphery of the buffer chamber and communicating with the buffer chamber via a first access door. The CVD apparatus additionally includes a heating chamber, also arranged at the periphery of the buffer chamber, and communicating with the buffer chamber via a second access door, for performing a heating treatment of the wafer before the insulating layer is deposited on the wafer in the CVD reaction chamber. A transport arm is provided for transporting the wafer into and out of the heating chamber and the chemical vapor deposition reaction chamber.
A method for performing a chemical vapor deposition procedure to deposit an insulating layer over a surface of a silicon wafer having components for integrated circuit devices located thereon, the method comprising the steps of:
A method for performing a chemical vapor deposition procedure to deposit an insulating layer over a surface of a silicon wafer having components for integrated circuit devices located thereon, the method comprising the steps of:
A method for performing a chemical vapor deposition procedure to deposit an insulating layer over a surface of a silicon wafer having components for integrated circuit devices located thereon, the method comprising the steps of:
Dependencies are inferred from the claim text.