Buried contact method to release plasma-induced charging damage on device

A method of subjecting an integrated circuit formed on a silicon substrate, having a polysilicon layer on its surfaces which is electrically connected to device structures, to a plasma process, comprising the steps of:

• connecting said polysilicon layer to a buffed contact in said silicon substrate;
• connecting said buried contact through said substrate to a ground potential;
• placing said integrated circuit in a chamber for accomplishing said plasma process;
• subjecting said integrated circuit to said plasma processing process whereby said connection to said buried contact prevents damage to said device structures;
• and
• removing said integrated circuit from said chamber.

A method of manufacturing an integrated circuit to prevent plasma-induced charging damage during manufacture, comprising the steps of:

• providing a semiconductor substrate having a first conductivity type;
• forming an oxide layer on said semiconductor substrate;
• forming a first opening in said oxide layer;
• forming a polysilicon layer over said oxide layer and in said first opening;
• patterning said polysilicon layer to form a second opening at least partially over said first opening;
• forming a diffusion region in said semiconductor substrate, connected to said polysilicon layer through said first opening, having a second conductivity type opposite to said first conductivity type, whereby a buried contact is formed;
• connecting said buried contact, through said substrate, to a ground reference;
• further processing in a plasma environment that would normally produce charging damage to said integrated circuit, but whereby said buried contact prevents said charging damage;
• and
• completing formation of said integrated circuit.