Method of manufacturing semiconductor integrated circuit device having a capacitor electrode

Abstract

A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate is provided. This method includes the steps of depositing a conductive film for forming a lower electrode of storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects the capacitor portion with the substrate, depositing a cap oxide film on the conductive film and planarizing the cap oxide film, applying a resist on the planarized cap oxide film to a uniform thickness and forming a pattern mask of the storage node capacitor portion from the resist, etching the cap oxide film and the conductive film by using the pattern mask as a mask, and forming a lower electrode of the storage node capacitor portion by removing the cap oxide film.

Dependencies are inferred from the claim text.