US 5,691,213 A · Low capacitance input/output integrated circuit

Abstract

A low capacitance input/output integrated circuit and a method by which the low capacitance input/output integrated circuit is formed. Formed upon a semiconductor substrate is an input/output integrated circuit which contains a minimum of one integrated circuit device. The integrated circuit device, in turn, possesses at minimum a source electrode and a drain electrode of the same polarity. Coincident with the source electrode and the drain electrode are normally at least one ion implant of polarity opposite to the source electrode and the drain electrode. At least a portion of the drain electrode is masked when the ion implant(s) of polarity opposite to the source electrode and the drain electrode are provided into the source electrode region and the drain electrode region of the integrated circuit device(s).

Claims11

Dependent claims

A method for forming a low capacitance input/output integrated circuit upon a semiconductor substrate comprising:

forming upon a semiconductor substrate an input/output integrated circuit, the input/output integrated circuit having contained therein at least one integrated circuit device, the integrated circuit device having at minimum a source electrode region and a drain electrode region into which are normally implanted dopant ions of polarity opposite to the source electrode and the drain electrode of the integrated circuit device;
masking at least a portion of the drain electrode region of the integrated circuit device;
and
implanting into areas other than the masked portion of the drain electrode region of the integrated circuit device dopant ions of polarity opposite to the polarity of the source electrode and the drain electrode of the integrated circuit device.

1 more element

Dependencies are inferred from the claim text.

Low capacitance input/output integrated circuit

Life of this patent

Low capacitance input/output integrated circuit

Life of this patent

Abstract

Claims11