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US 5,691,117 AGranted
Method for stripping photoresist employing a hot hydrogen atmosphere
AssigneeInternational Business Machines Corporation
InventorsRebecca Christine Lutsic, James Richard Murray, David William Sissenstein, Jr.
Life of this patent
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Abstract
It has been discovered that organic photoresists may be quickly, conveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water thereby eliminating the need to dispose of a stripping agent.
Claims22
A method for stripping photoresist from a substrate comprising the following steps:
- a. providing a substrate coated with photoresist;
- b. placing said substrate in a hydrogen atmosphere conveyor furnace;
- c. exposing said substrate to a hot hydrogen atmosphere of a hydrogen atmosphere conveyor furnace at a temperature of at least about 430.degree. C. for sufficient time to remove the photoresist, wherein the oxygen content inside the furnace does not exceed about 10 parts per million and further wherein the photoresist is essentially completely stripped by said hot hydrogen atmosphere, without using organic solvent wherein the photoresist comprises a polyisoprene.
A method for stripping polyisoprene coatings comprising the following steps:
- a. providing a substrate coated with polyisoprene coating;
- b. placing said substrate in a hydrogen atmosphere conveyor furnace exposing said substrate to a hot hydrogen atmosphere of a hydrogen atmosphere conveyor furnace at a temperature of 430.degree. to about 500.degree. C. where the substrate is a metallized ceramic substrate, and 430.degree. to about 480.degree. C. where the substrate is a metallized ceramic polyimide, for sufficient time to remove the polyisoprene coating wherein the polyisoprene coating is essentially completely removed by said hot hydrogen atmosphere without using organic solvent.
Dependencies are inferred from the claim text.