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AssigneeU.S. Philips Corporation
InventorsRonald Dekker, Henricus G. R. Maas, Wilhelmus T. A. J. Van Den Einden
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A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 .mu.m. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.
A semiconductor device for microwave frequencies, comprising a substrate which is provided, at a first side, with a semiconductor element, a passive element, and a pattern of conductive elements and, at the opposed, second side, with a metallization connected to the elements present at the first side through windows formed in the substrate, the substrate being formed by a layer of silicon which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer and the metallization being formed on a side of the layer of insulating material which is remote from the silicon layer.
Dependencies are inferred from the claim text.