Organometallic zirconium precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor

Abstract

An organometallic zirconium precursor, represented by following formula: L.sub.x .multidot.Zr(THD).sub.4 ›I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.

Dependencies are inferred from the claim text.