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US 5,688,704 AGranted
Integrated circuit fabrication
AssigneeLucent Technologies Inc.
InventorChun-Ting Liu
Life of this patent
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Abstract
A method of integrated circuit fabrication is disclosed. Layers of silicon nitride and silicide dioxide are formed upon a silicon substrate. These layers are etched to create a channel having the width of the intended gate. The silicon dioxide is then wet etched. Next, polysilicon is deposited within the channel. The silicon dioxide and the silicon nitride layers are then removed. A T-shaped polysilicon gate facilitates the formation of rectangular-shaped silicon nitride spacers. Subsequent salicidation is performed.
Claims6
A method of semiconductor integrated circuit fabrication comprising:
- forming first and second material layers overlying a substrate;
- forming a channel through said first and second layers;
- isotropically etching said second layer, thereby creating two cavities adjacent said channel;
- depositing a conductive material in said channel and said cavities;
- thereby forming a structure having a generally "T" shape;
- having two arms and a central portion;
- removing said second layer;
- anisotropically etching said first layer;
- thereby forming rectangular spacers comprised of said first material;
- and
- removing said two arms of said "T" shaped structure, at least some of said central portion of said structure remaining, thereby exposing said rectangular spacers.
8 more elements
Dependencies are inferred from the claim text.