Fabrication method for mask ROM
AssigneeLG Semicon Co., Ltd.
InventorJae Seung Choi
Life of this patent
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Abstract
A fabrication method for a mask ROM which is capable of embodying a high speed of the mask rom by reducing a resistance of a diffusion buried layer of a semiconductor memory device having a flat structure, includes the steps of forming a diffusion buried layer on a semiconductor substrate, forming a silicide layer on the diffusion buried layer and forming a first insulating layer on the silicide layer, forming a pattern including the first insulating layer, the silicide layer and the diffusion buried layer by forming and patterning a photoresist layer on the first insulating layer, forming sidewall spacers at both sides of the pattern, forming and patterning a polysilicon layer on the entire resultant surface of the semiconductor substrate, and performing a data coding on a predetermined portion of the semiconductor substrate.
Claims8
A fabrication method for a mask ROM according to present invention, comprising the steps of:
- forming a diffusion buried layer on a semiconductor substrate;
- forming a silicide layer on the diffusion buried layer and forming a first insulating layer on the silicide layer;
- forming a pattern comprising the first insulating layer, the silicide layer and the diffusion buried layer by forming and patterning a photoresist layer on the first insulating layer;
- forming sidewall spacers at both sides of the pattern;
- forming and patterning a polysilicon layer on the entire resultant surface of the semiconductor substrate;
- and performing a data coding on a predetermined portion of the semiconductor substrate.
Dependencies are inferred from the claim text.