Energy sensitive resist material and process for device fabrication using the resist material

A process for device fabrication comprising:

• (1) selectively exposing portions of an energy-sensitive resist material overlying a substrate to patterning radiation whereby a difference in ease of removal of exposed portions of the resist material relative to unexposed portions of the resist material by an aqueous base developing agent is effected, wherein the resist material is a phase compatible blend of a matrix polymer and a modifier polymer, wherein the matrix polymer is substantially more soluble in the aqueous base developing agent than the modifier polymer, and the modifier is a vapor-developable copolymer of an alkene and sulfur dioxide that is energy sensitive, wherein the average molecular weight of the modifier polymer is about 5,000 g/mol to about 500,000 g/mol, and wherein the modifier polymer responds to radiation primarily via a self-propagating reaction initiated by radiation to effect ease of removal by removing modifier in the irradiated portions of the resist material;
• (2) developing the pattern in an interruptive manner wherein the resist material is treated with an aqueous base developing agent and the development is stopped in a plurality of cycles, the time for the first cycle being insufficient to clear the resist material that is removed by the aqueous base developing agent;
• and
• (3) treating the article undergoing fabrication with an altering agent which preferentially alters regions of the article corresponding with the removed portion of the resist material, relative to the regions of the article surface underlying the remaining portions of the resist material.