US 5,687,119 A · Semiconductor memory device with floating gate electrode

Abstract

A semiconductor memory device comprises a memory cell having a floating gate electrode for storing an electric charge and a switching a element for charging the floating gate electrode with the electric charge and for performing a switching function so as to discharge the electric charge of the floating gate electrode. A method of manufacturing a semiconductor memory device of this type comprises the steps of forming a field insulating film on a substrate of a first conductivity type; forming an impurity region of a second conductivity type on the substrate in a column direction between a plurality of the field insulating films; forming a first gate insulating film on the substrate; forming a floating gate electrode so that impurity regions of the first conductivity type and second conductivity type are repeated on the first gate insulating film and the field insulating film between a plurality of the impurity regions of the second conductivity type; forming a second gate insulating film on the first gate insulating film; forming a control electrode on the second gate insulating film between the field insulating films in a direction perpendicular with respect to the floating gate electrode; and forming a gate electrode of a passing transistor between a plurality of the control electrodes.

Claims12

Dependent claims

A semiconductor memory device comprising:

a plurality of memory cells each having a floating gate electrode;
and
a plurality of switching elements for charging the floating gate electrode of each memory cell with an electric charge and for performing a switching function to discharge the electric charge;
wherein the plurality of switching elements are connected in series.

1 more element

Dependencies are inferred from the claim text.

Semiconductor memory device with floating gate electrode

Life of this patent

Semiconductor memory device with floating gate electrode

Life of this patent

Abstract

Claims12