Schottky barrier diode having a mesa structure
AssigneeMurata Manufacturing Co., Ltd.
InventorsTomoyasu Miyata, Koichi Sakamoto, Katsutoshi Toyama, Masaaki Sueyoshi
Life of this patent
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Abstract
In a Schottky barrier diode, concentration of an electrical field at an edge of an insulation layer is suppressed to improve the reverse breakdown voltage. An n- layer of a compound semiconductor substrate having an n+ layer and the n- layer is configured in the form of a mesa. An insulation layer is formed on at least a skirt portion and a slant portion of the mesa. An anode is formed on the insulation layer and n- layer, and a cathode is formed on the n+ layer. Thus, concentration of an electrical field at an edge of the insulation layer is canceled at least in part by an electrical field generated at the anode on the slant portion to improve the reverse breakdown voltage.
Claims11
A Schottky barrier diode comprising:
- a compound semiconductor substrate having an n+ layer and an n- layer, the n-layer being provided on the n+ layer and the n- layer being configured in the form of a mesa which has a skirt portion and a slant portion, said mesa being formed only by said n- layer;
- an insulation layer formed on at least the skirt portion and the slant portion of the mesa;
- an anode formed only on the insulation layer and the n- layer;
- and
- a cathode formed on the n+ layer.
A semiconductor device comprising:
- a semiconductor substrate having an active layer which is configured in the form of a mesa which has a skirt portion and a slant portion, said mesa being formed only by said active layer;
- an insulation layer formed on at least the skirt portion and the slant portion of the mesa;
- an anode formed only on the insulation layer and the active layer;
- and
- a cathode formed on the substrate opposite the anode.
Dependencies are inferred from the claim text.