Method of forming a die-to-insert permanent connection
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Alan G. Wood
Life of this patent
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Abstract
The invention disclosed herein is a semiconductor die assembly and method of making the same having a die and insert substrate that are electrically interconnected by diffusing gold bumps attached to the connecting surface of the substrate to aluminum-based bond pads on the die to form a permanent die-to-insert connection. The process for diffusing the gold bumps into the bond pads preferably occurs during a burn-in process wherein pressure and heat are applied to the die/substrate assembly without melting the gold bumps until a permanent die-to-insert substrate connection is properly made.
Claims19
A method for forming a permanent chip-to-substrate electrical interconnection, comprising:
- forming at least one conductive connection bump of a diffusible material having a melting temperature on a surface of a substrate;
- placing a semiconductor chip having at least one bond pad thereon onto said at least one conductive connection bump of said substrate with said at least one bond pad in contact with said at least one conductive connection bump;
- applying a force to bias said substrate and said chip together;
- and
- heating said substrate and said semiconductor chip under said applied force to a temperature below said melting temperature of said diffusible material and sufficient to diffuse diffusible material of said at least one conductive connection bump in contact with said at least one bond pad into said at least one bond pad to form a metallurgical bond therewith, wherein said heating is performed for a duration of time to effect an amount of diffusion of said diffusible material of said at least one conductive connection bump into said at least one bond pad sufficient to form said permanent interconnection.
A method for forming a permanent chip-to-substrate electrical interconnection comprising:
- forming at least one conductive connection bump of a diffusible material having a melting temperature on a surface of a substrate;
- placing a semiconductor chip having at least one bond pad thereon onto said at least one conductive connection bump of said substrate with said at least one bond pad in contact with said at least one conductive connection bump;
- applying a force to bias said substrate and said chip together at a magnitude sufficient to effect an amount of diffusion of said diffusible material of said at least one conductive connection bump into said at least one bond pad sufficient to form said permanent interconnection;
- and
- heating said substrate and said semiconductor chip under said applied force to a temperature below said melting temperature of said diffusible material and sufficient to diffuse diffusible material of said at least one conductive connection bump in contact with said at least one bond pad into said at least one bond pad to form a metallurgical bond therewith.
A process for forming permanent die-to-substrate electrical interconnections during the burn-in process, comprising:
- inserting a substrate having a plurality of gold connection bumps thereon into a carrier;
- placing a die having a plurality of bond pads thereon, with the bond pads in a contacting relationship with the gold connection bumps of the substrate;
- attaching a clamp onto the die carrier to apply a force to
- bias the plurality of bond pads of the die toward the plurality of gold connection bumps of the substrate;
- and
- burning-in the die by applying heat a temperature below a melting temperature of the gold of said gold connection bumps and sufficient to form permanent metallurgical bump-to-bond pad
- interconnections through gold diffusion from said plurality of gold connection bumps into said plurality of bond pads.
Dependencies are inferred from the claim text.