Method for the repair of lithographic masks
AssigneeInternational Business Machines Corporation
InventorsThomas Hall Baum, Paul Brian Comita, Frank M. Schellenberg
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Abstract
The present invention relates to a method for the repair of void type defects in phase-shifting optical lithography masks by depositing a transparent mateial on the defect from a gaseous precursor by ultraviolet beam-induced deposition.
Claims5
A method for repairing a phase-shifting defect in the transparent portion of the phase-shifting mask comprising the steps of:
- (i) contacting the phase-shifting mask with a gaseous precursor which dissociates upon exposure to ultraviolet light, and
- (ii) focusing an ultraviolet laser-beam on the defect without focusing on an opaque portion of the mask to dissociate the gaseous precursor and deposit transparent material on the defect.
A method for repairing a phase-shifting defect in a chromeless phase-shifting mask comprising the step of depositing a transparent material on the defect from a gaseous precursor which dissociated upon expose to ultraviolet light by ultraviolet laser beam-induced dissociation and deposition.
Dependencies are inferred from the claim text.