Method of making a low noise semiconductor device comprising a screening measurement

Abstract

The disclosed method of making a semiconductor device comprises a screening procedure that facilitates identification of devices having relatively low flicker noise. The devices are typically semiconductor diodes. The procedure utilizes our discovery of a correlation between the reverse bias current I.sub.r of a semiconductor device and the flicker noise power, and comprises measurement of the reverse bias current and comparison of the measured value with a predetermined comparison value I.sub.rc. Devices having I.sub.r .ltoreq.I.sub.rc are those that have relatively low flicker noise. The screening procedure is simple and quick, and can be readily performed in a manufacturing environment.

Dependencies are inferred from the claim text.