Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsKazushi Shirai, Norio Takeda
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Abstract
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, the film having a thickness in the range of 20-100 .mu.m; spinning the BIG-grown substrate at a high speed to remove a melt adhering thereto prior to taking the BIG-grown substrate out of the LPE furnace; and cooling the BIG-grown substrate to 300.degree. C. within one minute.
Claims9
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, comprising the steps of:
- manufacturing a BIG-grown substrate in an LPE furnace by an LPE method, said BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, said film having a thickness less than 100 .mu.m;
- spinning said BIG-grown substrate to remove a melt adhering thereto prior to taking said BIG-grown substrate out of the LPE furnace;
- and
- cooling said BIG-grown substrate to a temperature below 300.degree. C. within one minute after spinning said BIG-substrate to remove the melt.
Dependencies are inferred from the claim text.