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US 5,677,112 AGranted
Process for forming a pattern on a semiconductor substrate using a deep ultraviolet absorbent composition
AssigneesWako Pure Chemical Industries, Ltd., Matsushita Electric Industries Co., Ltd.
InventorsFumiyoshi Urano, Keiji Oono, Hiroshi Matsuda, Masayuki Endo, Satoshi Kobayashi
Life of this patent
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Abstract
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
Claims4
A process for forming a pattern on a semiconductor substrate which comprises:
- (i) coating the substrate with a deep ultraviolet absorbent composition;
- (ii) heating the coating to bring about a crosslinking reaction, thereby forming a film on said substrate;
- (iii) coating a resist material on said film;
- (iv) baking the coating of the resist material on said film to form a resist film;
- (v) exposing the resist film to KrF excimer laser light or deep ultraviolet light through a mask;
- (vi) heating the exposed film;
- and
- (vii) developing the heated and exposed film with an alkaline developing solution;
- wherein the deep ultraviolet absorbent composition comprises a) at least one compound containing one or more glycidyl groups, b) at least one anthracene compound, and c) a solvent capable of dissolving said compounds;
- and
- wherein said at least one anthracene compound is a compound of formula 1! ##STR19## wherein X represents --O--SO.sub.2 --, --O--CO-- or --CO--;
- R.sup.1 and R.sup.2 represent independently a hydrogen atom, an alkyl group, an alkoxyl group, a halogen atom or a hydroxyl group:
- R.sup.3, R.sup.4, R.sup.5 and R.sup.6 represent independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom or a group of formula 2! ##STR20## wherein X, R.sup.1 and R.sup.2 are as defined above;
- provided that at least one of R.sup.3 through R.sup.6 is a group of formula 2!, and further provided that groups of formula 2! cannot be present at the 1, 8, and 9 positions of the anthracene ring at the same time.
11 more elements
Dependencies are inferred from the claim text.