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US 5,675,186 AGranted
Construction that prevents the undercut of interconnect lines in plasma metal etch systems
AssigneeAdvanced Micro Devices, Inc.
InventorsLewis Shen, Sheshadri Ramaswami, Mark Chang, Robin Cheung
Life of this patent
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Abstract
A Ti.sub.x N.sub.y layer, not necessarily stoichiometric, is interposed between a titanium or aluminum interconnect layer to improve adhesion and prevent re-entrant undercutting and lifting of the interconnect layer during the process of patterning and plasma etching to form interconnect lines on a substrate, such as an oxide.
Claims4
A multi-layer interconnect line structure formed on an oxide substrate, wherein said oxide substrate consists essentially of an inter-metal layer dielectric, said multi-layer interconnect line structure comprising:
- (a) in either order, a nitrogen-containing titanium layer and a titanium layer wherein said nitrogen-containing titanium layer is not stoichiometric thereby having a composition given by Ti.sub.x N.sub.y, where x.noteq.y;
- (b) an aluminum layer;
- and
- (c) a titanium nitride anti-reflection layer.
1 more element
Dependencies are inferred from the claim text.