Semiconductor device and a method for manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a first groove extending to a depth below a surface of the semiconductor substrate, said groove being embedded with a first substance;
• a semiconductor layer formed on the surface of the semiconductor substrate and having a second groove, said second groove being embedded with a second substance;
• a semiconductor element formed in the semiconductor layer apart from said second groove;
• and
• wherein said first substance, said second substance, said semiconductor layer, and said semiconductor substrate all have a different thermal expansion coefficient with a difference between the thermal expansion coefficients of said second substance and said semiconductor layer being smaller than a difference between the thermal expansion coefficients of said first substance and said semiconductor substrate so that after heat processing a crystal defect is generated from a bottom portion of said first groove in said semiconductor substrate, said crystal defect generation alleviating stress and strain in other regions of the semiconductor device so that crystal defects are only generated in a region remote from operational areas of the semiconductor device.

A semiconductor device comprising:

• a semiconductor substrate having an element region with at least one corner;
• a semiconductor device formed in said element region of the semiconductor substrate;
• and
• wherein the at least one corner of said element region or at least one end of a region of said element region underlying a gate electrode of the semiconductor device has an impurity concentration which is lower than an impurity concentration of any other portion of said element region to avoid generation of a crystal defect at the at least one corner or at the at least one end after heat processing.

A semiconductor device comprising:

• a semiconductor substrate;
• a semiconductor element formed in a surface region of the semiconductor substrate;
• a first wiring layer comprising a gate electrode of the semiconductor element or a conductive portion connected to said gate electrode;
• a second wiring layer disposed above the first wiring layer;
• a high strain region producing structure in said semiconductor substrate under a connecting portion that connects said first and second wiring layers to each other;
• and
• wherein a crystal defect is generated by said high strain region producing structure after heat processing, said crystal defect generation resulting in stress and strain in other surface regions of the semiconductor substrate being alleviated to deter formation of crystal defects in any remote operational region of the semiconductor device.

A semiconductor device comprising:

• a semiconductor substrate having a groove;
• an element isolation region having an insulating film embedded in said groove of the semiconductor substrate;
• an element region formed of a plurality of first impurity regions isolated by the element isolation region;
• semiconductor elements respectively formed in said plurality of first impurity regions;
• an ion implanted second region having an implanted impurity concentration higher than an impurity concentration of the first impurity regions, said second region surrounding a periphery of said element region and serving to attract impurities in said semiconductor substrate;
• and
• wherein a crystal defect is generated in said second region after heat processing resulting in strain in the element region of said semiconductor substrate being alleviated so that a crystal defect is not generated in the element region necessary for operation of said semiconductor elements.