Semiconductor memory device having an internal amplification function

A semiconductor memory comprising one capacitor having a capacitor electrode and an opposing electrode, one insulated gate field effect transistor formed in a semiconductor substrate and having a gate electrode connected to a word line and a pair of source/drain regions, one of said pair of source/drain regions being connected to said capacitor electrode of said capacitor, and a thin film transistor formed above said insulated gate field effect transistor and having the same channel conductivity type as that of said insulated gate field effect transistor, said thin film transistor having a first gate electrode and a second gate electrode, said first gate electrode being constituted of said gate electrode of said insulated gate field effect transistor, said second gate electrode being constituted of said capacitor electrode of said capacitor, a source region of said thin film transistor being connected to the other of said pair of source/drain regions of said insulated gate field effect transistor and to a bit line, and a drain region of said thin film transistor being connected to a power supply line.